The Application of Nonvolatile Semiconductor Memory in the Development of Neuron-Based Field Effect Transistors in the Detection of Neuronal Signals between Synapses

  • Publication Date: 2020-04-02
Application Dept. Dept. of Physics
Principal Investigator A. P. Yen-Fu Lin ( Personal Webpage )
Project Title The Application of Nonvolatile Semiconductor Memory in the Development of Neuron-Based Field Effect Transistors in the Detection of Neuronal Signals between Synapses
Co-Principal Investigator 1. A.P. Shu-Ping Lin, G. I. of Biomedical Engineering 2. A.P. Ying-Chih Lai, Dept. of Materials Science & Engineering
Co-Investigator
Abstract Due to the large surface-to-volume ratio of two-dimensional (2D) materials, the electrical signal of 2D floating gate non-volatile layered memory (2D FG-NVM) could be easily triggered and changed by external charges. 2D materials particularly benefit to develop special bio-electronic components, such as the neuron-based field effect transistors (neuron-based FETs) in the detection of the neuronal signals. The sulfur atoms on the surface of the 2D layered sulfur diselenide (ReS2) are feasible to be chemically modified. The modified 2D ReS2 FG-NVM lures to detect the changes in the biological signals. Therefore, 2D ReS2 FG-NVM will be used to detect biomolecules secreted by neurons and record the neural signals propagated in the neuronal networks in this research proposal. Moreover, the recorded neural signals can be further applied to develop the artificial synapses and control the non-living objects in the future.