| 申請系所(單位) |
物理系 |
| 計畫主持人 |
林彥甫 副教授 ( 個人網頁 ) |
| 計畫名稱(中文) |
以浮閘極非揮發層狀記憶體開發神經細胞為基底之場效應電晶體於神經突觸訊號傳遞之偵測 |
| 計畫名稱(英文) |
The Application of Nonvolatile Semiconductor Memory in the Development of Neuron-Based Field Effect Transistors in the Detection of Neuronal Signals between Synapses |
| 共同主持人 |
1. 林淑萍 副教授 / 生醫工程研究所 2. 賴盈至 副教授 / 材料工程學系 |
| 協同主持人 |
|
| 中文摘要 |
二維浮閘極非揮發層狀記憶體 (2D FG-NVM)主要操作於外接電壓”觸發”導致電荷暫時捕捉或釋放的過程，由於二維材料體表面積的巨大，對於外界可能電壓觸發的面積甚廣，因此特別有利於開發與生物細胞結合的特殊電子元件。層狀二硒化硫(ReS2)表面的硫原子級容易接受化學的改質，使其接受生物訊號濃度變化的刺激，造成特殊電壓觸發過程。若能夠將二維二硒化硫浮閘極非揮發記憶體透過特殊生化表面處理，將特定生物分子或酵素固定在場效應電晶體上，並進一步用於生物或化學分子上的感測，並研發出神經細胞為基底的場效應電晶體 (neuron-based FETs)使其偵測與記憶生物訊號神經傳導因子。因此，本研究提案中將利用二維材料元件偵測細胞分泌的生物分子，並針對其生物分子在“細胞訊息傳遞 (detection of propagation of cellular signals)”的影響，由二維元件ReS2紀錄神經細胞突觸間的訊息傳遞，可以進一步發展人工突觸 (artificial synapses)並在未來控制非生物物體。 |
| 英文摘要 |
Due to the large surface-to-volume ratio of two-dimensional (2D) materials, the electrical signal of 2D floating gate non-volatile layered memory (2D FG-NVM) could be easily triggered and changed by external charges. 2D materials particularly benefit to develop special bio-electronic components, such as the neuron-based field effect transistors (neuron-based FETs) in the detection of the neuronal signals. The sulfur atoms on the surface of the 2D layered sulfur diselenide (ReS2) are feasible to be chemically modified. The modified 2D ReS2 FG-NVM lures to detect the changes in the biological signals. Therefore, 2D ReS2 FG-NVM will be used to detect biomolecules secreted by neurons and record the neural signals propagated in the neuronal networks in this research proposal. Moreover, the recorded neural signals can be further applied to develop the artificial synapses and control the non-living objects in the future. |
